IV-VI semiconductor mid-infrared lasers
We develop 3～4 μm PbS-based heterojunction lasers, 4～6 μm PbTe-based heterojunction lasers, 5～7 μm PbSe-based heterojuntion lasers, and PbSnTe, PbSnSe-based lasers with wavelength longer than 7 μm.
IV-VI semiconductor crystals and wafers
We can provide IV-VI semiconductor crystals and wafers which can be used for laser structure growth. Please contact also topological crystals and films.